Description The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics.
High thermal stability and outstanding chemical inertness make Si C an excellent material for high-power, low-loss semiconductor devices.
The present volume presents the state of the art of Si C device fabrication and characterization.
Topics covered include: Si C surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to Si C, their protection and compatibility with device processing; Schottky contacts to Si C; Schottky barrier formation; Schottky barrier inhomogeneity in Si C materials; technology and design of 4H-Si C Schottky and Junction Barrier Schottky diodes; Si/Si C heterojunction diodes; applications of Si C Schottky diodes in power electronics and temperature/light sensors; high power Si C unipolar and bipolar switching devices; different types of Si C devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of Si C power devices.
| Include | Si |
|---|
Materials Research Forum Llc Advancing silicon carbide electronics technology i: metal contacts to silicon carbide: physics, technology, applications, paperback/konstantinos zekentes
